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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
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  • Year: 2016
  • Author: Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon (eds.)
Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
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  • Year: 2020
  • Author: Byung-Eun Park (editor), Hiroshi Ishiwara (editor), Masanori Okuyama (editor), Shigeki Sakai (editor), Sung-Min Yoon (editor)
Ferroelectric Random Access Memories: Fundamentals and Applications
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  • Year: 2004
  • Author: James F. Scott (auth.), Prof. Hiroshi Ishiwara, Prof. Masanori Okuyama, Dr. Yoshihiro Arimoto (eds.)
Ferroelectric random access memories : fundamentals and applications
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  • Year: 2004
  • Author: зџіеЋџ, е®Џ 奥山, 雅則 жњ‰жњ¬, 由弘 ; ; Hiroshi Ishiwara; Masanori Okuyama; Yoshihiro Arimoto
Internal Limiting Membrane Surgery
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  • Year: 2021
  • Author: Ji Eun Lee, Ik Soo Byon, Sung Who Park
Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications
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  • Year: 2005
  • Author: Yoshihiro Ishibashi (auth.), Masanori Professor Okuyama, Yoshihiro Ishibashi (eds.)
Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications
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  • Year: 2005
  • Author: Yoshihiro Ishibashi (auth.), Masanori Professor Okuyama, Yoshihiro Ishibashi (eds.)
International Banking and Financial Centers
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  • Year: 1989
  • Author: Yoon S. Park (auth.), Yoon S. Park, Musa Essayyad (eds.)
The Park Chung Hee Era: The Transformation of South Korea
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  • English
  • Year: 2011
  • Author: Byung-Kook Kim, Ezra F. Vogel, Chang Jae Baik, Jorge I. Domínguez, Yong-Sup Han, Sung Gul Hong, Paul D. Hutchcroft, Hyug Baeg Im, Byung-joon Jun, Eun Mee Kim, Hyung-A Kim, Joo Hong Kim, Taehyun Kim, Yong-Jick Kim, Jung-Hoon Lee, Min Yong Lee, Nae-Young Lee, Young Jo Lee