Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
- Author
- Byung-Eun Park (editor), Hiroshi Ishiwara (editor), Masanori Okuyama (editor), Shigeki Sakai (editor), Sung-Min Yoon (editor)
- Publisher
- Springer
- Language
- English
- Edition
- 2nd ed. 2020
- Year
- 2020
- Page
- 439
- ISBN
- 9811512116,9789811512117
- File Type
- pdf
- File Size
- 22.6 MiB
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