Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
- Author
- Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon (eds.)
- Publisher
- Springer Netherlands
- Language
- English
- Edition
- 1
- Year
- 2016
- Page
- XVIII, 347
- ISBN
- 978-94-024-0839-3,978-94-024-0841-6
- File Type
- pdf
- File Size
- 17.5 MiB
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