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Process technology for silicon carbide devices
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  • English
  • Year: 2002
  • Author: Carl-Mikael Zetterling, Carl-Mikael Zetterling
Properties of lithium niobate
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  • English
  • Year: 2002
  • Author: K K Wong; Institution of Electrical Engineers.; INSPEC (Information service)
Properties of Gallium Arsenide
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  • English
  • Year: 1996
  • Author: M. R. Brozel, Gregory E. Stillman
Properties of Indium Phosphide
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  • English
  • Year: 1991
  • Author: Inspec
Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (E M I S Datareviews Series)
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  • English
  • Year: 1999
  • Author: James H. Edgar, Samuel Strite, Isamu Akasaki, Hiroshi Amano, Christian Wetzel
Physical Properties of Liquid Crystals: Nematics (E M I S Datareviews Series)
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  • English
  • Year: 2000
  • Author: David A. Dunmur, Atsuo Fukuda, Geoffrey Luckhurst